BFU690F دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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BFU690F
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حجم فایل
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135.776
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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12
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
NXP Semicon BFU690F,115
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Transistor Type:
NPN
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
100mA
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Power Dissipation (Pd):
230mW
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Transition Frequency (fT):
18GHz
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DC Current Gain (hFE@Ic,Vce):
90@20mA,2V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
5.5V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
-
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Package:
SOT-343
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Manufacturer:
NXP Semicon
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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Voltage - Collector Emitter Breakdown (Max):
5.5V
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Frequency - Transition:
18GHz
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Noise Figure (dB Typ @ f):
0.6dB ~ 0.7dG @ 1.5GHz ~ 2.4GHz
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Gain:
15.5dB ~ 18.5dB
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Power - Max:
230mW
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DC Current Gain (hFE) (Min) @ Ic, Vce:
90 @ 20mA, 2V
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Current - Collector (Ic) (Max):
100mA
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Mounting Type:
Surface Mount
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Package / Case:
SOT-343F
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Supplier Device Package:
4-DFP
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Base Part Number:
BFU69
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detail:
RF Transistor NPN 5.5V 100mA 18GHz 230mW Surface Mount 4-DFP
